NIKON NSR G8A步進式光刻機用于半導體功率器件制造工藝中的光刻工序，即將圖形投影到涂有光刻膠的硅片上的裝置，由此使得所需圖形區域的光刻膠曝光。
設備清單
ITEMS | Request & SPEC |
Wafer size | 200mm(8 Inch), |
Wafer Loader Type | Type 1 & Type 2 |
Wafer | 200mm (8 Inch) |
Projection ratio | 5 : 1 |
NA Variable System Exposure Field | Installed , 0.50 22.0mm X 22.0mm |
Reticle Size | 6 Inch |
Reticle Library | 9 Holds |
Wafer Carrier Table | 2 Carrier |
Illumination Optical System | Yes |
Field Image Alignment system | Yes |
Laser Step Alignment system | Yes |
Chip Leveling | Yes |
Pre Alignment2 | Wafer Alignment |
Wafer Chuck | 8-8 R-Type |
Data Back up | Tape Driver |
設備參數
No.
| Item | Specification | Results |
1 | Resolution | 0.55µm L & S |
|
2 | Long Term Focus Stability | Within ±0.30um |
|
3 | Auto focus repeatability | ±0.15um（25 points measurement using WAFLAT） |
|
4 | Focuscalibration repeatability
| 3s ≤0.15um（10 times measurement） |
|
5 | Lens Stability | Within 0.05um（3 days measurement） |
|
6 | Focus Calibration Repeatability | 3s ￡ 100 nm | nm |
7 | Lens Distortion
| within≤ ±0.07um | min max X: ~ ? Y: ~ ? |
8 | Magnification Control Accuracy | within ±15 nm | H - I: nm
C - I: nm |
9 | Maximum Exposure Area | 22.0mm(hor.) x 22.mm |
|
10 | Reticle Blind Setting Accuracy | +0.4 mm to +0.8 mm | Xp: mm ; Xm mm Yp: mm ; Ym mm |
11 | Exposure Power | 3 550 mW/cm2 | mW/cm2 |
12 | Illumination Uniformity | Within ± 1.5% |
|
13 | FIA Telecem | ±3 mrad | X: mrad Y: mrad |
14 | FIA Focus | ±2 ? | X: ? Y: ? |
15 | LSA Telecem | ±3 mrad | X: mrad Y: mrad |
16 | LSA Focus | ±2 ? | X: ? Y: ? |
17 | Intergrated Exposure Stability | (1) within ±1.2% (2) within ±0.5% | 100： mJ/cm2 200： mJ/cm2 400： mJ/cm2 800： mJ/cm2 |
18 | Wafer Holder Flatness | Within 1.5μm / 200mm Max≤0.8um | Max – Min：1.5UM Max ：0.8UM |
19 | Chip Leveling | Within ±5 μrad | X : Y: R: P: |
20 | Auto Focus Stability | Within 0.4 ? (range) |
|
21 | Reticle Rotation | Absolute value Within ±0.02? OF target value Repeatability Within 0.02? | Absolute value:
Repeatability: |
22 | Array Orthogonality | Within ±0.1 sec （ortmortm90)/2≤ ±0.3 urad | sec ORTM: μrad ORTM90: μrad |
23 | Stepping Precision | Within ±0.075? (3σ) | 3 Sigma X: 3 Sigma Y: |
24 | Overlay-LSA | lXl+3σ＜0.12? | X: Y: |
25 | Overlay-FIA | lXl+3σ＜0.12? | X: Y: |
26 | WL Repeatability | Within 15? (3σ) | 3 Sigma X: 3 Sigma Y: 3 Sigma T: |
27 | Lens Matching | |mean|+3s < 0.17um |
|
28 | Operational Test (1) Wafer System (2) Reticle System |
(1) Success rate: 3 99 % (2) Success rate: 100 % |
% % |
二手翻新現貨Nikon步進式光刻機 NSR G8A 1臺，包含技術方案修改和售后服務，同時為您提供整個半導體產業鏈的技術參考和方案設計。
